june 2009 FFP08D60L2, 8 a, 600 v, deuxpeed ? diode ?2009 fairchild semiconductor corporation FFP08D60L2 rev. b www.fairchildsemi.com 1 FFP08D60L2 features ? duexpeed recovery, t rr = 25 ns (@ i f = 8 a) ? max forward voltage, v f = 3.6 v (@ t c = 25c) ? 600v reverse voltage and high reliability ? avalanche energy rated applications ? boost diode in continuous mode power factor corrections 8 a, 600 v, deuxpeed ? diode the deuxpeed ? is a high-performance diode composed of two 300v dice in series and silicon nitride passivated ion- implanted epitaxial planar cons truction. this devic e is intended for use as boost diode in continuous mode power factor c orrectors and hard switc hing conditions and internal ceramic insulated package allows flexible heatsinking on c ommon or s eparate heatsink. absolute maximum ratings t c = 25 o c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter rating unit v rrm peak repetitive reverse voltage 600 v v rwm working peak reverse voltage 600 v v r dc blocking voltage 600 v i f(av) average rectified forward current @ t c = 115 o c 8 a i fsm non-repetitive peak surge current 60hz single half-sine wave 80 a t j , t stg operating and storage temperature range -65 to +150 o c symbol parameter rating unit r jc maximum thermal resistance, junction to case 2.0 o c/w device marking device package reel size tape width quantity f08d60l2 FFP08D60L2 to-220 - - 50 insulated to-220 1. cathode 2. anode pin assignments ? rohs compliant
FFP08D60L2, 8 a, 600 v, deuxpeed ? diode www.fairchildsemi.com 2 electrical characteristics t c = 25 o c unless otherwise noted symbol parameter min. typ. max. unit v f 1 i f = 8 a t c = 25 o c t c = 125 o c - - 2.6 2.2 3.6 v i r 1 v r = 600 v t c = 25 o c t c = 125 o c - - - - 10 100 a t rr i f = 8 a, di/dt = 200 a/s, v r = 390 v t c = 25 o c t c = 125 o c - - 13 21 25 ns w avl avalanche energy ( l = 40 mh) 20 - - mj test circuit and waveforms notes: 1: pulse: test puls e width = 300 s, duty cycle = 2% ?2009 fairchild semiconductor corporation FFP08D60L2 rev. b
FFP08D60L2, 8 a, 600 v, deuxpeed ? diode www.fairchildsemi.com 3 typical performance characteristics figure 1. typical forward voltage drop vs. forward current figure 2. typical reverse current vs. reverse voltage figure 3.typical junction capacitance figure 4. typical reverse recovery time vs. di/dt figure 5. typical reverse recovery current vs. di/dt figure 6. forward current derating curve 02468 0.1 1 10 100 t c = 75 o c t c = 125 o c forward current, i f [a] forward voltage, v f [v] t c = 25 o c 0 100 200 300 400 500 600 1 10 10 2 10 3 10 4 10 5 t c = 125 o c t c = 25 o c t c = 75 o c reverse current , i r [ na ] reverse volta g e, v r [ v ] 100 200 300 400 500 600 5 10 15 20 25 30 t c = 75 o c i f = 8a t c = 25 o c t c = 125 o c reverse recovery time, t rr [ns] di/dt [ a/ s ] 0.1 1 10 100 0 40 80 120 capacitances , cj [pf] typical capacitance at 0v = 108pf reverse voltage, v r [v] 100 200 300 400 500 600 0 1 2 3 4 5 6 t c = 75 o c i f = 8a t c = 25 o c t c = 125 o c reverse recovery current, i rr [a] di/dt [ a/ s ] 25 50 75 100 125 150 0 5 10 15 20 average forward current, i f(av) [a] case temperature, t c [ o c ] ?2009 fairchild semiconductor corporation FFP08D60L2 rev. b
FFP08D60L2, 8 a, 600 v, deuxpeed ? diode www.fairchildsemi.com 4 mechanical dimensions dimensions in millimeters ?2009 fairchild semiconductor corporation FFP08D60L2 rev. b
FFP08D60L2, 8 a, 600 v, deuxpeed ? diode www.fairchildsemi.com 5 ?2009 fairchild semiconductor corporation FFP08D60L2 rev. b
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